收藏本站
Typical Characteristics: N-Channel
10
2
V GS = 10V
4.5V
V GS = 3.0V
8
6.0V
3.5V
1.8
1.6
6
3.5V
1.4
4
3.0V
1.2
4.0V
4.5V
6.0V
2
0
1
0.8
10V
0
1
2
3
0
2
4
6
8
10
1.6
1.4
1.2
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
I D = 2.5A
V GS = 10V
0.25
0.2
I D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
I D = 1.25A
1
0.8
0.6
0.15
0.1
0.05
T A = 25 o C
T A = 125 o C
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
T J , JUNCTION TEMPERATURE ( C)
o
Figure 3. On-Resistance Variation
withTemperature.
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
T A =-55 C
10
8
V DS =5V
o
25 o C
125 o C
100
10
V GS = 0V
T A = 125 o C
1
6
4
2
0
0.1
0.01
0.001
0.0001
25 o C
-55 o C
1.5
2
2.5
3
3.5
4
0.2
0.4
0.6
0.8
1
1.2
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC6333C Rev C (W)
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
FDC634P MOSFET P-CH 20V 3.5A SSOT-6
FDC637AN MOSFET N-CH 20V 6.2A SSOT-6
FDC637BNZ MOSFET N-CH 20V 6.2A 6-SSOT
FDC638APZ MOSFET P-CH 20V 4.5A SSOT-6
FDC638P MOSFET P-CH 20V 4.5A SSOT-6
FDC6392S MOSFET P-CH 20V 2.2A SSOT-6
FDC6401N MOSFET N-CH DUAL 20V SSOT-6
FDC640P_F095 MOSFET P-CH 20V 4.5A 6-SSOT
相关代理商/技术参数
FDC6333C 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET NP CH 30V 2.5/2A SSOT6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, NP CH, 30V, 2.5/2A, SSOT6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, NP CH, 30V, 2.5/2A, SSOT6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):95mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V ;RoHS Compliant: Yes
FDC6333C 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL N/P CH MOSFET, 30V SUPER SOT-6
FDC6333C_Q 功能描述:MOSFET 30V/-30V N/P RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6333C-CUT TAPE 制造商:FAIRCHILD 功能描述:FDC6333C Series 30 V 95 mOhm N & P-Channel PowerTrench Mosfet - SSOT-6
FDC633N 功能描述:MOSFET SSOT-6 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC633N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDC633N_F095 功能描述:MOSFET 30V 5.2A N-CH ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC634 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel Enhancement Mode Field Effect Transistor